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| BAV99 BAV99 Connection Diagram 3 3 3 A7 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature Value 70 200 1.0 2.0 -55 to +150 150 Units V mA A A C C Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA Power Dissipation Thermal Resistance, Junction to Ambient Parameter Value 350 357 Units mW C/W Electrical Characteristics Symbol VR VF TA = 25C unless otherwise noted Parameter Breakdown Voltage Forward Voltage Test Conditions IR = 100 A IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA VR = 70 V VR = 25 V, TA = 150C VR = 70 V, TA = 150C VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 mA, RL = 100 Min 70 Max 715 855 1.0 1.25 2.5 30 50 1.5 6.0 Units V mV mV V V A A A pF ns IR Reverse Current CT trr Total Capacitance Reverse Recovery Time 2001 Fairchild Semiconductor Corporation BAV99, Rev. B BAV99 Small Signal Diode (continued) Typical Characteristics 150 Ta= 25 C 300 Ta= 25 C Reverse Voltage, V R [V] Reverse Current, IR [nA] 1 2 3 5 10 20 30 50 100 140 250 200 130 150 120 100 50 110 0 Reverse Current, IR [uA] 10 20 30 50 70 100 Reverse Voltage, V R [V] Figure 1. Reverse Voltage vs Reverse Current BV - 1.0 to 100uA Figure 2. Reverse Current vs Reverse Voltage IR - 10 to 100 V Ta= 25 C 700 450 Ta= 25 C Forward Voltage, VF [mV] Forward Voltage, VF [mV] 650 400 600 350 550 300 500 250 450 1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10 Forward Current, IF [uA] Forward Current, IF [mA] Figure 3. Forward Voltage vs Forward Current VF - 1.0 to 100 uA Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA 1.3 Ta= 25 C Ta= 25 C Forward Voltage, VF [V] Total Capacitance [pF] 10 20 30 50 100 200 300 500 1.4 1.2 1.2 1.0 1.1 0.8 0.6 1.0 0 2 4 6 8 10 12 14 Forw ard C urrent, I F [m A ] R everse V oltage [V ] Figure 5. Forward Voltage vs Forward Current VF - 10 - 800 mA Figure 6. Total Capacitance vs Reverse Voltage BAV99, Rev. B BAV99 Small Signal Diode (continued) Typical Characteristics (continued) 4.0 400 Ta= 25 C Reverse Recovery Time [nS] 3.5 300 3.0 Current [mA] 2.5 200 IF (A V ) -A V ER AG 2.0 ER E CT 100 IF IE DC U RR 1.5 0 EN TmA 150 1.0 10 20 30 40 50 60 0 50 100 o Reverse Current [mA] Ambient Temperature, T A [ C] Figure 7. Reverse Recovery Time vs Reverse Current TRR - IR 10 mA vs 60 mA Figure 8. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) 500 Power Dissipation, P [mW ] D 400 DO -35 P kg 300 SO T-23 P kg 200 100 0 0 50 100 150 o 200 Average Tem perature, I O [ C ] Figure 9. Power Derating Curve BAV99, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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